A study of tunneling assisted charge exchange on the inner interface of high-k dielectric stacks

Author

Castán, H. ; García, H. ; Gómez, A. ; Duenas, S. ; Bailón, L.

Author_Institution

Dipt. de Electr. y Electron., Univ. de Valladolid, Valladolid, Spain

fYear

2011

fDate

8-11 Feb. 2011

Firstpage

1

Lastpage

4

Abstract

The tunneling assisted charge exchange on the inner interface of high dielectric constant (high-k) dielectric stacks has been studied. The charging and discharging of traps existing at the HfO₂/SiN_x interlayer increase the transient capacitance amplitude, and so deep level transient spectroscopy (DLTS) measurements provide overestimated interfacial state density (D_it) values. This effect is quite important for very thin silicon nitride layers. The analysis of our experimental data allowed us to propose a physical model of the inner interface behavior.

Keywords

MIS structures; charge exchange; deep level transient spectroscopy; hafnium compounds; high-k dielectric thin films; interface states; silicon compounds; tunnelling; HfO₂-SiN_x; MIS structures; deep level transient spectroscopy; high dielectric constant dielectric stacks; inner interface behavior; interfacial state density; thin silicon nitride layers; transient capacitance amplitude; trap charging; trap discharging; tunneling-assisted charge exchange; Capacitance; Dielectrics; Films; Silicon; Temperature measurement; Transient analysis; Variable speed drives; Dielectrics; Electrical properties and measurements; Interfacial states; Metal-oxide-semiconductor structures (MIS);

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2011 Spanish Conference on

Conference_Location

Palma de Mallorca

Print_ISBN

978-1-4244-7863-7

Type

conf

DOI

10.1109/SCED.2011.5744210

Filename

5744210