Threshold voltage model for ion-implanted short gate-length GaAs MESFETs under dark and illuminated conditions

Author

Tripathi, Shweta ; Jit, S.

Author_Institution

Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India

fYear

2011

fDate

8-11 Feb. 2011

Firstpage

1

Lastpage

4

Abstract

In the present work, an attempt has been made to analytically model the threshold voltage of short-channel optically controlled GaAs MESFETs with a vertical Gaussian profile. The two-dimensional (2D) Poisson´s equation has been solved with suitable boundary conditions using superposition method to obtain an optical radiation dependent threshold voltage expression. The credibility of the model is established by comparison of the calculated threshold voltage with the numerical simulation data obtained by ATLAS™ device simulator.

Keywords

Poisson equation; Schottky gate field effect transistors; gallium arsenide; ion implantation; semiconductor device models; 2D Poisson´s equation; ATLAS™ device simulator; boundary conditions; dark conditions; illuminated conditions; ion-implanted short gate-length GaAs MESFET; optical radiation dependent threshold voltage expression; short-channel optically controlled GaAs MESFET; superposition method; threshold voltage model; vertical Gaussian profile; Gallium arsenide; Integrated optics; Logic gates; MESFETs; Mathematical model; Threshold voltage; GaAs MESFET; illumination; ion-implantation; threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2011 Spanish Conference on

Conference_Location

Palma de Mallorca

Print_ISBN

978-1-4244-7863-7

Type

conf

DOI

10.1109/SCED.2011.5744213

Filename

5744213