Title :
Threshold voltage model for ion-implanted short gate-length GaAs MESFETs under dark and illuminated conditions
Author :
Tripathi, Shweta ; Jit, S.
Author_Institution :
Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Abstract :
In the present work, an attempt has been made to analytically model the threshold voltage of short-channel optically controlled GaAs MESFETs with a vertical Gaussian profile. The two-dimensional (2D) Poisson´s equation has been solved with suitable boundary conditions using superposition method to obtain an optical radiation dependent threshold voltage expression. The credibility of the model is established by comparison of the calculated threshold voltage with the numerical simulation data obtained by ATLAS™ device simulator.
Keywords :
Poisson equation; Schottky gate field effect transistors; gallium arsenide; ion implantation; semiconductor device models; 2D Poisson´s equation; ATLAS™ device simulator; boundary conditions; dark conditions; illuminated conditions; ion-implanted short gate-length GaAs MESFET; optical radiation dependent threshold voltage expression; short-channel optically controlled GaAs MESFET; superposition method; threshold voltage model; vertical Gaussian profile; Gallium arsenide; Integrated optics; Logic gates; MESFETs; Mathematical model; Threshold voltage; GaAs MESFET; illumination; ion-implantation; threshold voltage;
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
DOI :
10.1109/SCED.2011.5744213
