Title :
Dielectric breakdown recovery in ultrathin high-k gate stacks. Impact in MOSFETs and circuit performance
Author :
Crespo-Yepes, A. ; Martin-Martinez, J. ; Rodriguez, R. ; Nafria, M. ; Aymerich, X.
Author_Institution :
Dept. d´´Eng. Electron., Univ. Autonoma de Barcelona (UAB), Bellaterra, Spain
Abstract :
The reversibility of the gate dielectric breakdown (BD) in MOSFETs with ultra-thin hafnium based high-k dielectric has been analyzed. BD recovery allows different conductivity states in the dielectric. The dependence of the characteristics of these conduction states with the device area and with the location of the conductive path along the channel is analyzed. Finally, the impact of the BD recovery on the transistor performance and on the functionality of several circuits are studied.
Keywords :
MOSFET; electric breakdown; hafnium; high-k dielectric thin films; Hf; MOSFET; conductive path; conductivity states; dielectric breakdown recovery; gate dielectric breakdown; ultrathin high-k gate stacks; Conductivity; Dielectrics; High K dielectric materials; Logic gates; MOSFETs; Switches; CMOS devices; Dielectric Breakdown; Reliability; Resistive Switching; high-k;
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
DOI :
10.1109/SCED.2011.5744217
