DocumentCode
2858120
Title
Dielectric breakdown recovery in ultrathin high-k gate stacks. Impact in MOSFETs and circuit performance
Author
Crespo-Yepes, A. ; Martin-Martinez, J. ; Rodriguez, R. ; Nafria, M. ; Aymerich, X.
Author_Institution
Dept. d´´Eng. Electron., Univ. Autonoma de Barcelona (UAB), Bellaterra, Spain
fYear
2011
fDate
8-11 Feb. 2011
Firstpage
1
Lastpage
4
Abstract
The reversibility of the gate dielectric breakdown (BD) in MOSFETs with ultra-thin hafnium based high-k dielectric has been analyzed. BD recovery allows different conductivity states in the dielectric. The dependence of the characteristics of these conduction states with the device area and with the location of the conductive path along the channel is analyzed. Finally, the impact of the BD recovery on the transistor performance and on the functionality of several circuits are studied.
Keywords
MOSFET; electric breakdown; hafnium; high-k dielectric thin films; Hf; MOSFET; conductive path; conductivity states; dielectric breakdown recovery; gate dielectric breakdown; ultrathin high-k gate stacks; Conductivity; Dielectrics; High K dielectric materials; Logic gates; MOSFETs; Switches; CMOS devices; Dielectric Breakdown; Reliability; Resistive Switching; high-k;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location
Palma de Mallorca
Print_ISBN
978-1-4244-7863-7
Type
conf
DOI
10.1109/SCED.2011.5744217
Filename
5744217
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