Title :
A 4096-bit high-speed ECL compatible RAM
Author :
Ebel, M. ; Regitz, W.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
A totally ECL I/O compatible, fast 4096 bit N-channel dynamic MOS RAM will be described. Access time is less than 80 ns, and no external or cyclic refresh is required.
Keywords :
Charge pumps; Clocks; Decoding; Differential amplifiers; Feeds; Latches; Oscillators; Random access memory; Read-write memory; Variable structure systems;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International
DOI :
10.1109/ISSCC.1975.1155364
