• DocumentCode
    2858230
  • Title

    Fundamental performance limits of MOS integrated circuits

  • Author

    Swanson, R. ; Meindl, J.

  • Author_Institution
    Stanford University, Stanford, CA, USA
  • Volume
    XVIII
  • fYear
    1975
  • fDate
    27426
  • Firstpage
    110
  • Lastpage
    111
  • Abstract
    This paper will describe MOST characteristic equations which encompass both weak and strong inversion and, at the same time, both long and short channels.
  • Keywords
    Charge carrier density; Energy consumption; Insulation; Laplace equations; MOS integrated circuits; Poisson equations; Propagation delay; Rough surfaces; Surface roughness; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International
  • Type

    conf

  • DOI
    10.1109/ISSCC.1975.1155365
  • Filename
    1155365
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2858230