Analysis and Design of GaInSn Current Limiter

Author

Wu, Huaren ; Li, Xiaohui ; Zhang, Min ; Stade, D. ; Schau, H.

Author_Institution

Dept. of Electr. Eng., Nanjing Normal Univ.

Volume

5

fYear

2006

fDate

8-12 Oct. 2006

Firstpage

2627

Lastpage

2630

Abstract

The 3-D field simulation of magneto-fluid in GaInSn current limiter was performed with finite element method (FEM). The magnetic forces were calculated and then turbulence driven by the magnetic forces was simulated. The results of the turbulent simulation coincide with that of the experiments. The current limit principle of the current limiter was analyzed. Measures for improving the GaInSn current limiter were presented according to the results of simulations and experiments

Keywords

III-V semiconductors; circuit simulation; current limiters; finite element analysis; gallium compounds; indium compounds; 3D field simulation; FEM; GaInSn; current limiter design; current limiters; finite element method; liquid flow; magnetic forces calculation; magneto-fluid; short circuit currents; turbulence driven; Analytical models; Circuit simulation; Containers; Current limiters; Insulation; Irrigation; Magnetic analysis; Magnetic forces; Short circuit currents; Voltage; Current limiters; Liquid flow; Short circuit currents;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2006. 41st IAS Annual Meeting. Conference Record of the 2006 IEEE

Conference_Location

Tampa, FL

ISSN

0197-2618

Print_ISBN

1-4244-0364-2

Electronic_ISBN

0197-2618

Type

conf

DOI

10.1109/IAS.2006.256910

Filename

4025599