Simulation of the temperature dependence of a-Si:H solar cell current-voltage characteristics

Simulation data of the performance of amorphous hydrogenated silicon (a-Si:H) thin film solar cells using the software package Sentaurus TCAD (Synopsis Inc) are presented. The Sentaurus software is configured with standard theoretical models describing e. g. the density of states in the mobility gap of a-Si:H, generation/recombination statistics, optical data of a-Si:H thin films, etc. to calculate illuminated current voltage curves and the respective spectral response for the initial and degraded state of solar cell. The study of the temperature dependence of the electrical parameters of solar cell is realized. The simulations results were compared with experimental data measured in T-Solar laboratory obtaining a good coincidence.