DocumentCode
2858324
Title
Linear mode Reach — Through Avalanche Photodiodes for medium energy X-ray detection
Author
Fernández-Martínez, P. ; Cortés, I. ; Hidalgo, S. ; Flores, D. ; Pellegrini, G. ; Lozano, M.
Author_Institution
CSIC, Inst. de Microelectron. de Barcelona, Barcelona, Spain
fYear
2011
fDate
8-11 Feb. 2011
Firstpage
1
Lastpage
4
Abstract
Reach-Through Avalanche Photodiodes (RT-APD) for medium energy X-ray detection, with 300 μm thick active region, have been devised, fabricated and characterised at the IMB-CNM clean room. The RT-APD structure and principle of operation are detailed in this paper, together with the main modifications introduced over its general design in order to improve the device performance. The optimisation of these parameters has been made with the aid of TCAD simulations, which suitability is showed here. Finally, the main aspects of the fabrication process and the first characterisation results have been also included.
Keywords
X-ray detection; avalanche photodiodes; technology CAD (electronics); TCAD simulation; fabrication process; medium energy X-ray detection; parameter optimisation; reach-through avalanche photodiodes; Avalanche photodiodes; Detectors; Electric fields; Junctions; Optimization; Photonics; Silicon; Photodiodes (RT-APD); Reach-Through Avalanche; TCAD simulation; X-ray detection; linear mode; silicon detectors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location
Palma de Mallorca
Print_ISBN
978-1-4244-7863-7
Type
conf
DOI
10.1109/SCED.2011.5744229
Filename
5744229
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