• DocumentCode
    2858324
  • Title

    Linear mode Reach — Through Avalanche Photodiodes for medium energy X-ray detection

  • Author

    Fernández-Martínez, P. ; Cortés, I. ; Hidalgo, S. ; Flores, D. ; Pellegrini, G. ; Lozano, M.

  • Author_Institution
    CSIC, Inst. de Microelectron. de Barcelona, Barcelona, Spain
  • fYear
    2011
  • fDate
    8-11 Feb. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Reach-Through Avalanche Photodiodes (RT-APD) for medium energy X-ray detection, with 300 μm thick active region, have been devised, fabricated and characterised at the IMB-CNM clean room. The RT-APD structure and principle of operation are detailed in this paper, together with the main modifications introduced over its general design in order to improve the device performance. The optimisation of these parameters has been made with the aid of TCAD simulations, which suitability is showed here. Finally, the main aspects of the fabrication process and the first characterisation results have been also included.
  • Keywords
    X-ray detection; avalanche photodiodes; technology CAD (electronics); TCAD simulation; fabrication process; medium energy X-ray detection; parameter optimisation; reach-through avalanche photodiodes; Avalanche photodiodes; Detectors; Electric fields; Junctions; Optimization; Photonics; Silicon; Photodiodes (RT-APD); Reach-Through Avalanche; TCAD simulation; X-ray detection; linear mode; silicon detectors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices (CDE), 2011 Spanish Conference on
  • Conference_Location
    Palma de Mallorca
  • Print_ISBN
    978-1-4244-7863-7
  • Type

    conf

  • DOI
    10.1109/SCED.2011.5744229
  • Filename
    5744229