Crystalline silicon solar cells beyond 20% efficiency

Author

Ortega, P. ; López, G. ; Orpella, A. ; Martín, I. ; Colina, M. ; Voz, C. ; Bermejo, S. ; Puigdollers, J. ; García, M. ; Alcubilla, R.

Author_Institution

Grup de Micro i NanoTecnologies (MNT), Univ. Politec. de Catalunya UPC, Barcelona, Spain

fYear

2011

fDate

8-11 Feb. 2011

Firstpage

1

Lastpage

4

Abstract

This paper describes a fabrication process to obtain high efficiency c-Si cells (>; 20%) based on the Laser Fired Contact Passivated Emitter Rear Cell (LFC-PERC) concept. Photovoltaic efficiencies beyond 20% have been achieved using thermal SiO₂ as a rear passivation layer on 2 cm × 2 cm solar cells with 0.45 Qcm Fz c-Si substrates. Efficiencies up to 22% are expected for material resistivities in the 0.4-5 Ωcm using an optimized rear contact grid.

Keywords

electrical resistivity; elemental semiconductors; laser beam applications; passivation; silicon; solar cells; LFC-PERC; Si; crystalline silicon solar cell; high efficiency c-Si cell; laser fired contact passivated emitter rear cell; material resistivity; passivation layer; photovoltaic efficiency; Passivation; Photovoltaic cells; Photovoltaic systems; Silicon; Silver; Surface emitting lasers; crystalline silicon; high efficiency; laser-fired contact; solar cell; tight induced plating;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2011 Spanish Conference on

Conference_Location

Palma de Mallorca

Print_ISBN

978-1-4244-7863-7

Type

conf

DOI

10.1109/SCED.2011.5744231

Filename

5744231