DocumentCode
2858818
Title
An X-band GaAs IMPATT power amplifier
Author
Eisenhart, R.
Author_Institution
Hughes Aircraft Company, Culver City, CA, USA
Volume
XVIII
fYear
1975
fDate
27426
Firstpage
132
Lastpage
133
Abstract
A GaAs IMPATT diode was utilized in the design of a 4-W X-band transmit amplifier. Five such amplifiers were constructed, showing good tracking of the important performance parameters. Design procedures and techniques will be discussed.
Keywords
Admittance measurement; Aircraft; Circuit synthesis; Cities and towns; Diodes; Gallium arsenide; Guidelines; Noise level; Power amplifiers; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International
Type
conf
DOI
10.1109/ISSCC.1975.1155403
Filename
1155403
Link To Document