Title :
An X-band GaAs IMPATT power amplifier
Author_Institution :
Hughes Aircraft Company, Culver City, CA, USA
Abstract :
A GaAs IMPATT diode was utilized in the design of a 4-W X-band transmit amplifier. Five such amplifiers were constructed, showing good tracking of the important performance parameters. Design procedures and techniques will be discussed.
Keywords :
Admittance measurement; Aircraft; Circuit synthesis; Cities and towns; Diodes; Gallium arsenide; Guidelines; Noise level; Power amplifiers; Radio frequency;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International
DOI :
10.1109/ISSCC.1975.1155403
