DocumentCode
2858938
Title
Which way the 4K RAM
Author
Foss, R.
Author_Institution
Microsystems International, Ltd., Ottawa, Canada
Volume
XVIII
fYear
1975
fDate
0-0 Feb. 1975
Firstpage
73
Lastpage
73
Abstract
After a few false starts, the 4K RAM is at last arriving as a main memory component. But the optimum configuration has not as yet been resolved. To be determined is whether it will be a 3-transistor or 1-transistor cell, and if a 1-T, will sensing be single ended or by balanced flip-flop. Additionally, we must know if the process can be standard silicon gate, coplanar, or a special version of N-channel metal gate, and how will the problems of testing the new generation of memories be approached. Varying views on these areas will be presented.
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1975.1155411
Filename
1155411
Link To Document