Author_Institution :
Microsystems International, Ltd., Ottawa, Canada
Abstract :
After a few false starts, the 4K RAM is at last arriving as a main memory component. But the optimum configuration has not as yet been resolved. To be determined is whether it will be a 3-transistor or 1-transistor cell, and if a 1-T, will sensing be single ended or by balanced flip-flop. Additionally, we must know if the process can be standard silicon gate, coplanar, or a special version of N-channel metal gate, and how will the problems of testing the new generation of memories be approached. Varying views on these areas will be presented.