• DocumentCode
    2858938
  • Title

    Which way the 4K RAM

  • Author

    Foss, R.

  • Author_Institution
    Microsystems International, Ltd., Ottawa, Canada
  • Volume
    XVIII
  • fYear
    1975
  • fDate
    0-0 Feb. 1975
  • Firstpage
    73
  • Lastpage
    73
  • Abstract
    After a few false starts, the 4K RAM is at last arriving as a main memory component. But the optimum configuration has not as yet been resolved. To be determined is whether it will be a 3-transistor or 1-transistor cell, and if a 1-T, will sensing be single ended or by balanced flip-flop. Additionally, we must know if the process can be standard silicon gate, coplanar, or a special version of N-channel metal gate, and how will the problems of testing the new generation of memories be approached. Varying views on these areas will be presented.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1975.1155411
  • Filename
    1155411