DocumentCode :
2858938
Title :
Which way the 4K RAM
Author :
Foss, R.
Author_Institution :
Microsystems International, Ltd., Ottawa, Canada
Volume :
XVIII
fYear :
1975
fDate :
0-0 Feb. 1975
Firstpage :
73
Lastpage :
73
Abstract :
After a few false starts, the 4K RAM is at last arriving as a main memory component. But the optimum configuration has not as yet been resolved. To be determined is whether it will be a 3-transistor or 1-transistor cell, and if a 1-T, will sensing be single ended or by balanced flip-flop. Additionally, we must know if the process can be standard silicon gate, coplanar, or a special version of N-channel metal gate, and how will the problems of testing the new generation of memories be approached. Varying views on these areas will be presented.
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1975.1155411
Filename :
1155411
Link To Document :
بازگشت