DocumentCode
2858989
Title
Analysis and design of a 30 MHz resonant boost converter
Author
Cai, Wei ; Zhang, Zhiliang
Author_Institution
Jiangsu Key Laboratory of New Energy Generation and Power Conversion, Nanjing University of Aeronautics and Astronautics, China
Volume
3
fYear
2012
fDate
2-5 June 2012
Firstpage
1905
Lastpage
1909
Abstract
This paper presents the analysis and design procedure of a Zero Voltage Switching (ZVS) resonant Boost converter operating at 30 MHz under hysteretic control (also called on-off control or bang-bang control). The Boost converter is based on the Class Φ inverter and combined with a class E rectifier. A multi-stage resonant gate driver is used to drive the power MOSFET effectively. The power train, gate dive and control design are provided in detail respectively. The design considerations are presented based on the efficiency optimization between the high component stress and the effect of parasitic parameters. The simulation results of the 30 MHz resonant Boost converter are given to verify the validity of the design method. An experimental prototype is being built.
Keywords
Inverters; Logic gates; MOSFET circuits; Rectifiers; Resonant frequency; Voltage control; Zero voltage switching; class Φ inverter; class E rectifier; hysteretic control; resonant Boost converter; resonant gate driver;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Motion Control Conference (IPEMC), 2012 7th International
Conference_Location
Harbin, China
Print_ISBN
978-1-4577-2085-7
Type
conf
DOI
10.1109/IPEMC.2012.6259129
Filename
6259129
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