Title :
An adequate structure for power microwave FETs
Author :
Vergnolle, C. ; Funck, R. ; Laviron, M.
Author_Institution :
Thomson-CSF, Orsay, France
Abstract :
The development of a high-power GaAs FET using an interdigitated structure produced by ionic etching on a NP+ epitaxial wafer will be discussed, citing its power output (1W), efficiency (35%) and gain (6 dB) achieved at 6 GHz.
Keywords :
Equivalent circuits; Etching; FETs; Frequency measurement; Gain measurement; Gallium arsenide; Irrigation; Power generation; Power measurement; Substrates;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International
DOI :
10.1109/ISSCC.1975.1155419
