Comparison of impurity induced disordering potential profiles

Author

Kelaidis, C. ; Arnold, J.M.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

fYear

1993

fDate

34033

Abstract

The effect of the different functions, used to describe the potential profile of a disordered quantum well structure, on its electronic dispersion relations, has been investigated. The error function, and the hyperbolic secant function, have been applied to the envelope function approximation. The results obtained suggest that the hyperbolic secant profile is a valid approximation of the error function only for long annealing times. Comparison with results obtained from analytic calculations of the effective mass equations, for the hyperbolic secant profile, show that their validity is restricted to bandgap calculations for long annealing times and not for calculations of optical properties

Keywords

energy gap; impurity electron states; interface electron states; ion implantation; semiconductor quantum wells; GaAs-GaAlAs; bandgap calculations; disordered quantum well structure; effective mass equations; electronic dispersion relations; energy band dispersion relations; envelope function approximation; error function; hyperbolic secant function; impurity induced disordering potential profiles; ion implantation; long annealing times;

fLanguage

English

Publisher

iet

Conference_Titel

Applications of Quantum Well Technologies, IEE Colloquium on

Conference_Location

London

Type

conf

Filename

230870