Title :
A 10-W 6-GHz GaAs IMPATT amplifier for microwave radio systems
Author :
Tatsuguchi, I. ; Gewartowski, J.
Author_Institution :
Bell Laboratories, Allentown, PA, USA
Abstract :
This paper will cover an IMPATT amplifier using five flat-doping-profile GaAs diodes in three cascaded, circulator-coupled stages, suitable for power amplifier use in a longhaul FM radio relay system.
Keywords :
Circuit noise; Coaxial components; Diodes; Frequency; Gallium arsenide; Microwave amplifiers; Noise figure; Power amplifiers; Power generation; Strips;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International
DOI :
10.1109/ISSCC.1975.1155433
