DocumentCode
285931
Title
Strained layer quantum well laser with simultaneous high power and narrow linewidth
Author
Reid, T.J. ; Williams, P. ; Hurley, J. ; Carr, N. ; Robbins, D.J. ; Eddolls, D. ; Buus, J.
Author_Institution
GEC-Marconi Materials Technology Ltd., Towcester, UK
fYear
1993
fDate
34033
Firstpage
42675
Lastpage
42677
Abstract
Strained layer MQW ridge waveguide DFB lasers, emitting at 1.57μm, with simultaneous high power (over 50 mW) and narrow linewidth (under 1MHz) have been fabricated. The authors report on the MOCVD growth and the assessment of these lasers
Keywords
distributed feedback lasers; laser transitions; semiconductor growth; semiconductor lasers; spectral line breadth; vapour phase epitaxial growth; 1.57 micron; 50 mW; MOCVD growth; high power; narrow linewidth; ridge waveguide DFB lasers; strained layer MQW lasers;
fLanguage
English
Publisher
iet
Conference_Titel
Applications of Quantum Well Technologies, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
230872
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