Title :
Growth and assessment of GaInP/GaAs/GaInAs quantum well lasers
Author :
Glew, L.W. ; Henshall, G.D. ; Collar, A.J. ; Moule, D.J.
Author_Institution :
BNR Europe Ltd., Harlow, UK
Abstract :
GaAs/GaInAs strained quantum well lasers with InGaP cladding layers are suitable for pumping Er-doped fibre amplifiers. The authors report on the MOCVD growth and assessment of ridge waveguide lasers operating at 980 nm
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 980 nm; GaInP-GaAs-GaInAs; GaInP/GaAs/GaInAs quantum well lasers; III-V semiconductor; MOCVD growth; ridge waveguide lasers;
Conference_Titel :
Applications of Quantum Well Technologies, IEE Colloquium on
Conference_Location :
London
