Integration of GaAs quantum well devices using dielectric cap disordering

Author

Ayling, S.G. ; Beauvais, J. ; Marsh, J.H.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

fYear

1993

fDate

34033

Firstpage

42491

Lastpage

42494

Abstract

Dielectric cap disordering has been used to fabricate low loss waveguide regions in GaAs/AlGaAs quantum well material. These have been integrated with an undisordered laser region to form extended cavity lasers with cavity lengths of up to 2 mm and propagation losses as low as 4 cm^-1. Furthermore, extended ridge waveguide cavities have been fabricated with Bragg reflectors to form DBR lasers with gratings of length 1 mm. Dielectric cap disordering has also been used to demonstrate selective intermixing in selected areas enabling regions of different band cap to be created simultaneously in one piece of epitaxial material

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; integrated optics; laser cavity resonators; optical losses; semiconductor lasers; semiconductor quantum wells; 1 mm; 2 mm; Bragg reflectors; DBR lasers; GaAs-AlGaAs quantum well material; III-V semiconductor; dielectric cap disordering; extended cavity lasers; extended ridge waveguide cavities; gratings; integration; low loss waveguide regions; propagation losses; selective intermixing; undisordered laser region;

fLanguage

English

Publisher

iet

Conference_Titel

Applications of Quantum Well Technologies, IEE Colloquium on

Conference_Location

London

Type

conf

Filename

230878