Title :
InGaAs/GaAs strained quantum well structures for 1047 nm modulators
Author :
Goodwill, D.J. ; Stanley, C.R. ; Holland, M.C. ; McElhinney, M. ; Desmulliez, M.P.Y. ; Walker, A.C.
Author_Institution :
Dept. of Phys., Heriot-Watt Univ., Edinburgh, UK
Abstract :
A strain-balanced InGaAs/GaAs pin multiple quantum well modulator has been constructed and demonstrated to have a modulation contrast ratio of 1.74:1 in transmission. The quantum efficiency of the device when used as a detector was ~99%, even without the application of an external bias. Simulations show that if the device is configured as an S-SEED and an epitaxial mirror is incorporated, bistable operation with 2V supply voltage threshold and a reasonable contrast ratio can be obtained in the 1040 nm region
Keywords :
III-V semiconductors; SEEDs; gallium arsenide; indium compounds; infrared detectors; optical modulation; p-i-n photodiodes; photodetectors; semiconductor quantum wells; 1047 nm; 2 V; 99 percent; III-V semiconductor; InGaAs-GaAs; InGaAs/GaAs strained quantum well structures; S-SEED; SEED; bistable operation; detector; epitaxial mirror; modulation contrast ratio; pin multiple quantum well modulator; quantum efficiency; supply voltage threshold; transmission;
Conference_Titel :
Applications of Quantum Well Technologies, IEE Colloquium on
Conference_Location :
London
