• DocumentCode
    2859422
  • Title

    Double implanted bipolar high-speed gates with low-power dissipation

  • Author

    Graul, J. ; Kaiser, Hartmut ; Wilhelm, W. ; Ryssel, H. ; Kranz, H.

  • Author_Institution
    Siemens AG, Munich, W. Germany
  • Volume
    XVIII
  • fYear
    1975
  • fDate
    27426
  • Firstpage
    120
  • Lastpage
    121
  • Abstract
    This paper will discuss an investigation of the speed power relations of oxide-isolated subnanosecond logic gate circuits (ECL and E2CL) compared with double-diffused circuits. Under optimizing aspects, with respect to propagation delay, data of double-implanted integrated bipolar transistors and circuit performance will be given, dependent on implantation parameters.
  • Keywords
    Bipolar transistors; Boron; Circuit testing; Ion implantation; Logic design; Logic gates; Logic testing; Microwave transistors; Propagation delay; Surface resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International
  • Type

    conf

  • DOI
    10.1109/ISSCC.1975.1155442
  • Filename
    1155442
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2859422