Title :
High-Q GaAs tuning varactors
Author :
Kwan, F. ; Barrera, J. ; Solomon, R. ; DeFevere, D.
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
Abstract :
GaAs Schottky barrier tuning varactors with twice the Q of existing varactors will be described. Optimization of varactor diode quality factor Q involved minimization of device series resistance for a given diode breakdown voltage.
Keywords :
Capacitance; Conductivity; Electrical resistance measurement; Gallium arsenide; Loss measurement; Packaging; Schottky diodes; Skin effect; Substrates; Varactors;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1976.1155474
