• DocumentCode
    2859879
  • Title

    Continuously charge-coupled random-access memory (C3RAM)

  • Author

    Hoffmann, Karel

  • Author_Institution
    Siemans AG, Munich, Germany
  • Volume
    XIX
  • fYear
    1976
  • fDate
    18-20 Feb. 1976
  • Firstpage
    130
  • Lastpage
    131
  • Abstract
    A C3RAM (tAcc= 250 ns), where single-transistor memory cells are combined with MOS-transmission-lines, will be covered. Development provides an almost lossless charge transport and the design of a 300 μm2memory cell using 5-μm design rules.
  • Keywords
    Attenuation; Capacitors; Differential equations; Propagation losses; Pulse amplifiers; Random access memory; Read-write memory; Silicon; Solid state circuits; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1976.1155475
  • Filename
    1155475
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2859879