Title :
Integrated circuit D-MOS telephone crosspoint array
Author :
Moss, C. ; Cauge, T. ; Hodges, D.
Author_Institution :
Signetics Corp., Sunnyvale, CA, USA
Abstract :
Double-diffused MOS transistors have desirable properties for use as an analog switch, or crosspoint, in space division telephone switching systems. This paper will cover a 8 × 2 D-MOS crosspoint array in which the analog switches have ON resistance of 12 ohms and OFF capacitance (source-drain) of 0.25 pF. Sixteen 12-ohm switches have been integrated with control circuitry on the same die, while typically maintaining -105 dB isolation and crosstalk.
Keywords :
Circuits; Crosstalk; Distortion; Frequency; Insertion loss; Latches; MOSFETs; Microwave devices; Switches; Telephony;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1976.1155484