Small geometry effects on poly-Si gated MOSFET devices

Summary form only given. The dependence of MOSFET threshold voltage V_T on device length, L and width, W is described; V _T is also a function of drain voltage, V_DS and the slope of this function depends on the back surface bias, V_BS. All these principal features of small geometry effects are explained in a non-mathematical fashion with diagrams of the fringing electrostatic field from the polysilicon gate electrode. Data on V_T dependence on V_DS and V_BS are presented; even at an effective channel length as long as 3 microns a non-scaled device can have poor short channel performance with huge V_T dependence on geometry and steep V_T dependence on V_DS