Title :
Polysilicon for bipolar technology and circuits
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
The properties of polysilicon emitter contacts in bipolar transistors are discussed. Self-aligned processes using single and double polysilicon layer technology such as SICOS and trench isolated bipolar technology, and the implementation of vertical pnp polysilicon emitter transistors in complementary bipolar technology are reviewed. The performances of state of the art digital ECL bipolar circuits and of bipolar SRAMs and PROMs are presented
Keywords :
PROM; SRAM chips; bipolar integrated circuits; bipolar transistors; elemental semiconductors; emitter-coupled logic; integrated circuit technology; integrated logic circuits; silicon; SICOS; Si; bipolar PROM; bipolar SRAM; bipolar technology; bipolar transistors; complementary bipolar technology; digital ECL bipolar circuits; double polysilicon layer technology; polysilicon emitter contacts; self aligned processes; single polysilicon layer technology; trench isolated technology; vertical p-n-p polysilicon emitter transistors;
Conference_Titel :
Poly-Si Devices and Applications, IEE Colloquium on
Conference_Location :
London
