DocumentCode
286032
Title
In-situ phosphorous doped VLPCVD poly-Si layers for polysilicon thin film transistors
Author
Sarret, M. ; Liba, A. ; Fortin, B. ; Le Bihan, F. ; Pichon, L. ; Bonnaud, O.
Author_Institution
Rennes I Univ., France
fYear
1993
fDate
23-24 Mar 1993
Firstpage
42644
Lastpage
42647
Abstract
The authors have developed a Very Low Pressure Chemical Vapor Deposition process (VLPCVD) allowing in-situ phosphorous doping and have tried both to control the doping level in a large range and to get a related high conductivity. They show that controlling the deposition parameters allows one to optimize the film conductivity, free carrier mobility, and doping efficiency. This process has been used to fabricate source and drain regions of thin film transistors
Keywords
Hall effect; carrier mobility; chemical vapour deposition; electronic conduction in crystalline semiconductor thin films; elemental semiconductors; phosphorus; semiconductor doping; semiconductor growth; silicon; thin film transistors; Hall mobility; Si:P; doping efficiency; doping level; drain regions; free carrier mobility; high conductivity; in situ doping; polysilicon thin film transistors; source region; very low pressure CVD;
fLanguage
English
Publisher
iet
Conference_Titel
Poly-Si Devices and Applications, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
231011
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