Title :
Base current of I2L transistors
Author_Institution :
Philips Research Laboratories, Eindhoven, Netherlands
Abstract :
Several models of the I2L transistors are known and the inverse operating NPN models have also been probed. This paper will assess the factors which determine the base current of I2L transistors, a test chip with 33 different geometrical I2L types, serving as a measurement base.
Keywords :
Area measurement; Current measurement; Electrons; Epitaxial layers; Logic circuits; Logic devices; Solid modeling; Spontaneous emission; Substrates; Surface treatment;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1976.1155501
