DocumentCode :
286033
Title :
Observation and modelling of the gate-source capacitance peak in polysilicon TFTs
Author :
Tam, Simon W B ; Migliorato, Piero ; Izzard, Martin J. ; Reita, C.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
fYear :
1993
fDate :
23-24 Mar 1993
Firstpage :
42583
Lastpage :
42586
Abstract :
Analysis and modelling of the terminal capacitances of polysilicon TFTs are of great interest in view of the design and fabrication of digital and analog circuits. The authors present for the first time measurements of the gate-source capacitance (Cgs) in a wide frequency range (20 Hz-10 kHz), and propose a new model to explain the observed behaviour
Keywords :
capacitance; elemental semiconductors; semiconductor device models; silicon; thin film transistors; 20 Hz to 10 kHz; Si; gate-source capacitance peak; modelling; polysilicon TFTs; terminal capacitances;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Poly-Si Devices and Applications, IEE Colloquium on
Conference_Location :
London
Type :
conf
Filename :
231013
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=286033
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