DocumentCode
286034
Title
Characterisation of trapping states in poly-Si thin film transistors
Author
Ayres, J.R.
Author_Institution
Philips Res. Lab., Redhill, UK
fYear
1993
fDate
23-24 Mar 1993
Firstpage
42552
Lastpage
42555
Abstract
Polycrystalline-silicon thin film transistors have been assessed using current based deep level transient spectroscopy. A continuous distribution of states was observed through the bad gap with a high density of tail states near the conduction band edge. Hot carrier stressing was shown to produce a spatially non-uniform increase in the density of states at the drain end of the device
Keywords
deep level transient spectroscopy; elemental semiconductors; hot carriers; interface electron states; semiconductor device testing; silicon; thin film transistors; Si; conduction band edge; continuous distribution of states; deep level transient spectroscopy; hot carrier stressing; polysilicon TFT; tail states; thin film transistors; trapping states;
fLanguage
English
Publisher
iet
Conference_Titel
Poly-Si Devices and Applications, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
231014
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