Title :
Low temperature (⩽600°C) poly-silicon thin film transistors
Author :
Stroh, R.J. ; Plais, F. ; Kretz, T. ; Legagneux, P. ; Huet, O. ; Pribat, D. ; Jiang, N. ; Hugon, M.C. ; Agius, B.
Author_Institution :
Thomson CSF, Orsay, France
Abstract :
The authors have fabricated thin film transistors using UHVCVD silicon layers and DECR PECVD gate oxides. With this combination of manufacturing processes, TFTs with an acceptable level of off-current have been obtained without the need to use lightly doped drain (LDD) or field plate structures. The results could probably be improved by the use of Si2H6 as parent gas for the UHV chemical vapour deposition of silicon since the deposition rate would increase, leading to lower levels of contamination in the films
Keywords :
chemical vapour deposition; elemental semiconductors; plasma CVD; semiconductor growth; semiconductor technology; silicon; thin film transistors; 600 degC; DECR PECVD gate oxides; Si-SiO2; UHV chemical vapour deposition; deposition rate; manufacturing processes; off-current; polysilicon TFT; thin film transistors;
Conference_Titel :
Poly-Si Devices and Applications, IEE Colloquium on
Conference_Location :
London
