DocumentCode
286043
Title
Hot carrier induced degradation in polycrystalline silicon TFTs: experimental and theoretical analysis
Author
Pecora, A. ; Tallarida, G. ; Fortunato, Guglielmo ; Mariucci, Luigi ; Reita, C. ; Migliorato, P.
Author_Institution
IESS-CNR, Roma, Italy
fYear
1993
fDate
23-24 Mar 1993
Abstract
The application of bias-stresses with high source-drain voltage and different gate voltages produces in polycrystalline silicon thin-film transistors marked modifications both in the off-current as well as in the device transconductance. These effects have been explained in terms of hot-carrier effects related to a combination of charge injection into the gate insulator and formation of interface states near the drain
Keywords
hot carriers; insulated gate field effect transistors; interface electron states; semiconductor device models; thin film transistors; bias-stresses; charge injection; device transconductance; gate insulator; gate voltages; hot-carrier effects; interface states; off-current; polycrystalline Si; source-drain voltage; thin-film transistors;
fLanguage
English
Publisher
iet
Conference_Titel
Poly-Si Devices and Applications, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
231025
Link To Document