Title :
A 3-W X-band bipolar transistor amplifier
Author :
You-Sun Wu ; Han-Tzong Yuan ; Kruger, Jorg
Author_Institution :
Texas Instruments, Inc., Dallas TX, USA
Abstract :
A single-stage X-band power amplifier, using a silicon bipolar transistor, which has demonstrated a CW output power of 3 W at 8 GHz with a 6-dB power gain and 400 MHz bandwidth, will be covered.
Keywords :
Aerospace electronics; Bipolar transistors; Circuit optimization; Electron beams; Impedance; Microstrip; Optical amplifiers; Power amplifiers; Power measurement; Silicon;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1976.1155509
