The growth and characterization of Zn nanowires covered with ZnO using plasma-assisted molecular beam irradiation

Author

Tokunaga, T. ; Sasaki, K. ; Kuroda, K. ; Iijima, T. ; Jang, B. ; Hayashi, Y. ; Afre, R.A. ; Tanemura, M.

Author_Institution

Dept. of Quantum Eng., Nagoya Univ., Nagoya, Japan

fYear

2011

fDate

21-24 June 2011

Firstpage

1

Lastpage

2

Abstract

The Zn nanowires covered with ZnO were grown by oxygen plasma-assisted molecular beam irradiation method and characterized, was reported. To grow these nanowires, oxygen plasma was irradiated to Zn thin film evaporated on Si(100) substrate. Scanning electron microscopy and transmission electron microscopy observation results of nanowires revealed that the nanowire has diameter of 80 nm, and nanowires was constructed with crystalline ZnO. Moreover NWs surface was covered by crystalline ZnO. Further Zn and ZnO orientation was coincident and resulted the ZnO appeared by oxidation of Zn nanowires.

Keywords

II-VI semiconductors; nanofabrication; nanowires; oxidation; plasma deposition; scanning electron microscopy; semiconductor growth; transmission electron microscopy; wide band gap semiconductors; zinc; zinc compounds; NW surface; Si; ZnO-Zn; nanowire; plasma-assisted molecular beam irradiation; scanning electron microscopy; size 80 nm; transmission electron microscopy; Nanowires; Oxidation; Radiation effects; Substrates; Zinc oxide; TEM; Zinc oxidation; molecular beam;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Conference_Location

Tao-Yuan

ISSN

2159-3523

Print_ISBN

978-1-4577-0379-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2011.5991618

Filename

5991618