A study on Schottky Barrier NOR Flash memory

Author

Fang, Zhou ; Lin, Zermin

Author_Institution

Sch. of Microelectron., Shanghai Jiao Tong Univ., Shanghai, China

fYear

2011

fDate

21-24 June 2011

Firstpage

1

Lastpage

2

Abstract

In this paper, characteristics of Schottky Barrier (SB) NOR Flash memory devices are studied through simulation. SB Flash cell adopts source-side hot electron and hole injection (SSHEI/SSHHI) in programming and erasing, respectively, and higher P/E efficiency can be achieved as compared with conventional NOR Flash devices. We also show that the distribution of injected carriers in SB cells are tighter and more localized near the source or drain side, while reverse read is only slightly altered after programming. This represents a potential merit in scaled NROM devices which demands the elimination of interference between the two bits contained in a single cell.

Keywords

NOR circuits; Schottky barriers; flash memories; hot carriers; read-only storage; P-E efficiency; SB NOR flash memory device; SB flash cell; SSHEI-SSHHI; Schottky barrier NOR flash memory device; injected carrier; interference elimination; potential merit; scaled NROM device; source-side hot electron injection; source-side hot hole injection; Electron traps; Flash memory; Impact ionization; Interference; Programming; Tunneling; NOR Flash; NROM; Schottky Barrier; Source Side Injection; TCAD Simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Conference_Location

Tao-Yuan

ISSN

2159-3523

Print_ISBN

978-1-4577-0379-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2011.5991619

Filename

5991619