Title :
A high-density, read/write, nonvolatile charge-addressed memory
Author :
Fagan, J. ; White, M. ; Lampe, D.
Author_Institution :
Westinghouse Electric Corp., Baltimore, MD, USA
Abstract :
A high density, read/write, 16K-bit (0.5 mil2/bit) non-volatile charge-addressed memory with TTL compatibility and full decoding will be described. The memory cell is a MNOS structure with crosspoint geometry and address-decode features.
Keywords :
Capacitors; Charge coupled devices; Clocks; Electrons; Nonvolatile memory; Random access memory; Read-write memory; Shift registers; Substrates; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1976.1155518
