Title :
Resonant frequency tunableness of solidly mounted resonators
Author :
Liu, Chien-hao ; Chou, Yuan-fang
Author_Institution :
Dept. of Mech. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The performance of solidly mounted resonator (SMR) depends on the thickness control of each layer. Since thickness variation is inevitable in film deposition, the resonant frequency will shift from the desired value. In order to calculate the required electrode thickness for a given resonant frequency, an SMR is treated as a combination of two substructures, the top electrode and the remaining layers. The substructure synthesis method is employed to calculate the required thickness of electrode. Monte Carlo simulation is adopted to investigate tunableness of resonant frequency with random thickness deviation in every layer. An SMR with a 6-period-reflector and 2.4GHz series resonant frequency is chosen for the investigation. The material of piezoelectric layer is aluminum nitride and the reflector is composed of tungsten and aluminum films. The top electrode is a half-wavelength Al film and the SMR is mounted on a silicon substrate of 525μm in thickness. Monte Carlo simulation shows that the 3σ of electrode trimming value is 0.03μm when the layer thickness deviation with 3σ value equals to 1% of the mean thickness.
Keywords :
resonators; thickness control; Monte Carlo simulation; aluminum film; aluminum nitride; electrode thickness; electrode trimming value; film deposition; layer thickness deviation; piezoelectric layer; random thickness deviation; reflector; resonant frequency tunableness; series resonant frequency; solidly mounted resonator; substructure synthesis method; thickness control; thickness variation; tungsten film; Acoustics; Electrodes; Frequency response; Impedance; Monte Carlo methods; Resonant frequency; Substrates; Monte Carlo simulation; Resonance frequency; SMR; piezoelectric film;
Conference_Titel :
Piezoelectricity, Acoustic Waves and Device Applications (SPAWDA), 2010 Symposium on
Conference_Location :
Xiamen
Print_ISBN :
978-1-4244-9822-2
DOI :
10.1109/SPAWDA.2010.5744364