Title :
Tunable resistance switching characteristics in a thin FeOx-transition layer part I: Compliance current controlling
Author :
Chang, Yao-Feng ; Feng, Li-Wei ; Huang, Chih-Wen ; Wu, Guo-Yuan ; Chang, Cheng-Hao ; Wu, Jia-Jiun ; Wang, Shin-Yuan ; Chang, Ting-Chang ; Chang, Chun-Yen
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Multilevel resistance switching characteristics of the thin FeOx-transition layer were studies by controlling the maximum current compliance during set process. It is obtained that the LRS is mainly influenced by the compliance current value, which is nearly independent to the HRS. Moreover, statistics of set and reset electrical parameters show that the possible switching process is localized, and also, the multiple resistive switching states in the TiN/SiO2/FeOx/Fe memristor could be approved.
Keywords :
digital storage; electric current control; iron; iron compounds; memristors; silicon compounds; switching circuits; titanium compounds; FeOx; HRS; LRS; TiN-SiO2-FeOx-Fe; electrical parameter; high resistance state; low resistance state; maximum current compliance control; memristor; multilevel tunable resistance switching characteristic; multiple resistive switching state; thin-transition layer; Current measurement; Electrodes; Iron; Materials; Resistance; Switches; Tin;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991627
