Tunable resistance switching characteristics in a thin FeOx- transition layer part II: Sweeping voltage controlling

Author

Chang, Yao-Feng ; Feng, Li-Wei ; Huang, Chih-Wen ; Wu, Guo-Yuan ; Chang, Cheng-Hao ; Wu, Jia-Jiun ; Wang, Shin-Yuan ; Chang, Ting-Chang ; Chang, Chun-Yen

Author_Institution

Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2011

fDate

21-24 June 2011

Firstpage

1

Lastpage

2

Abstract

Multilevel resistance switching characteristics of the thin FeO_x-transition layer were studies by controlling the maximum stopped voltage during reset process. It is obtained that the HRS is mainly influenced by the stopped voltage value, which is nearly independent to the LRS. Moreover, statistics of set and reset electrical parameters show that the possible switching process is localized, and also, the multiple resistive switching states in the TiN/SiO₂/FeO_x/Fe memristor could be approved.

Keywords

digital storage; iron; iron compounds; memristors; silicon compounds; switching circuits; titanium compounds; TiN-SiO₂-FeO_x-Fe; memristor; multilevel resistance switching; multiple resistive switching states; reset electrical parameters; set electrical parameters; stopped voltage value; sweeping voltage controlling; thin transition layer; tunable resistance switching; Electrodes; Iron; Resistance; Switches; Tin; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Conference_Location

Tao-Yuan

ISSN

2159-3523

Print_ISBN

978-1-4577-0379-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2011.5991628

Filename

5991628