Title :
Tunable resistance switching characteristics in a thin FeOx- transition layer part II: Sweeping voltage controlling
Author :
Chang, Yao-Feng ; Feng, Li-Wei ; Huang, Chih-Wen ; Wu, Guo-Yuan ; Chang, Cheng-Hao ; Wu, Jia-Jiun ; Wang, Shin-Yuan ; Chang, Ting-Chang ; Chang, Chun-Yen
Author_Institution :
Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Multilevel resistance switching characteristics of the thin FeOx-transition layer were studies by controlling the maximum stopped voltage during reset process. It is obtained that the HRS is mainly influenced by the stopped voltage value, which is nearly independent to the LRS. Moreover, statistics of set and reset electrical parameters show that the possible switching process is localized, and also, the multiple resistive switching states in the TiN/SiO2/FeOx/Fe memristor could be approved.
Keywords :
digital storage; iron; iron compounds; memristors; silicon compounds; switching circuits; titanium compounds; TiN-SiO2-FeOx-Fe; memristor; multilevel resistance switching; multiple resistive switching states; reset electrical parameters; set electrical parameters; stopped voltage value; sweeping voltage controlling; thin transition layer; tunable resistance switching; Electrodes; Iron; Resistance; Switches; Tin; Voltage control;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991628
