Annealing effect on hydrothermally grown ZnO thin-film transistors

Author

Wang, Jyh-Liang ; Hsieh, Tsang-Yen ; Hwang, Chuan-Chou ; Shye, Der-Chi ; Yang, Po-Yu

Author_Institution

Dept. of Electron. Eng., Ming Chi Univ. of Technol., Taipei, Taiwan

fYear

2011

fDate

21-24 June 2011

Firstpage

1

Lastpage

2

Abstract

High-performance zinc oxide (ZnO) thin-film transistors (TFTs) with location-controlled lateral grain were fabricated by low-temperature hydrothermal method. The ZnO active channel was laterally grown with aluminum-doped ZnO (AZO) seed layer underneath the Ti/Pt film. The annealed ZnO TFTs reveal high-quality ZnO films with the compensated structural defects in the channel region compared to the unannealed devices. Thus, the superior device performances (i.e. the excellent μFE of 9.07 cm²/V·s, high on/off current ratio of ~ 106, and low gate leakage current of <; 1 nA) of hydrothermal growth (HTG) ZnO TFTs can be achieved after annealing.

Keywords

II-VI semiconductors; annealing; crystal defects; leakage currents; liquid phase deposition; semiconductor growth; thin film transistors; wide band gap semiconductors; zinc compounds; ZnO; aluminum-doped seed layer; annealing effect; hydrothermal growth; location-controlled lateral grain; low-gate leakage current; low-temperature hydrothermal growth; on-off current ratio; structural defects; thin-film transistors; Annealing; Films; Iron; Logic gates; Performance evaluation; Thin film transistors; Zinc oxide; hydrothermal growth (HTG); lateral grain growth; thin-film transistors (TFTs); zinc oxide (ZnO);

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Conference_Location

Tao-Yuan

ISSN

2159-3523

Print_ISBN

978-1-4577-0379-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2011.5991629

Filename

5991629