Title :
High-speed GaAs MSI
Author :
Van Tuyl, R. ; Liechti, C.
Author_Institution :
Hewlett-Packard Laboratories, Palo Alto, CA, USA
Abstract :
A report on a process for the medium-scale integration of MESFET digital circuits on GaAs will be offered. Gate propagation delays < 100 ps with fanout of two and binary division from dc to 2 GHz have been achieved.
Keywords :
Frequency conversion; Gallium arsenide; Geometry; Logic circuits; Logic gates; MESFETs; Parasitic capacitance; Power dissipation; Propagation delay; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1976.1155523
