Title :
Diffusion behavior and mechanism of co-sputtering metals as bonding materials for 3D IC interconnects during annealing treatment
Author :
Hsu, S.Y. ; Shih, J.Y. ; Chen, K.N.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A diffusion behavior was observed for co-sputtered metals during thermal treatment, while these metals were fabricated as bonding mediums in 3D IC applications. This paper reports and discusses the mechanical behavior of co-sputtering metals before and after annealing. In addition, co-sputtering metal bonding seems to be an option for bonding technology based on their excellent bonding results.
Keywords :
annealing; diffusion bonding; integrated circuit bonding; integrated circuit interconnections; sputtering; three-dimensional integrated circuits; 3D IC interconnect; annealing treatment; bonding material; cosputtering metal; diffusion behavior; diffusion mechanism; thermal treatment; Annealing; Atomic measurements; Bonding; Copper; Materials; Three dimensional displays; 3DIC; bonding; co-sputtering; diffusion;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991631
