DocumentCode
2860834
Title
A high-speed 16K-bit NMOS RAM
Author
Itoh, Kenji ; Shimohigashi, K. ; Chiba, Kazuya ; Taniguchi, Kazuhiro ; Kawamoto, Yasutaka
Author_Institution
Hitachi Ltd., Tokyo, Japan
Volume
XIX
fYear
1976
fDate
18-20 Feb. 1976
Firstpage
140
Lastpage
141
Abstract
A 16K-BIT NMOS dynamic memory array, designed lor high speed main frame memory applications, will be described. High speed has been achieved with a sense circuit for one tramistorcell, in combination with improved N-channel silicon-gate technology.
Keywords
Circuit testing; Clocks; DC generators; MOS devices; Preamplifiers; Random access memory; Read-write memory; Signal generators; Timing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1976.1155530
Filename
1155530
Link To Document