DocumentCode :
2860873
Title :
Reprogrammable nonvolatile semiconductor memories
Author :
Anderson, Lindsay
Author_Institution :
Bell Laboratories, Allentown, PA, USA
Volume :
XIX
fYear :
1976
fDate :
18-20 Feb. 1976
Firstpage :
88
Lastpage :
88
Abstract :
Whether these memories are ready for widespread use and if so, who needs them, are key factors today. Related topics to be discussed include retentivity, write-erase capability, testing and applications, with an eye on competition from more established technologies.
Keywords :
Fabrication; Geometry; Nonvolatile memory; Physics; Power supplies; Random access memory; Read-write memory; Semiconductor device reliability; Semiconductor memory; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1976.1155532
Filename :
1155532
Link To Document :
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