Title :
Studies of oxide to polymer bonding for 3D IC
Author :
Lin, S.L. ; Huang, W.C. ; Chen, K.N.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The two bonds important in BCB bonding are discussed. According to the principles of silicon oxide bonding and the nature of these two bonds, we established the most likely mechanism for BCB to oxide bonding. We compare BCB to PECVD oxide bonding with BCB to thermal oxide bonding and investigate the difference in bonding strength. We also observe the BCB surface changes before and after bonding.
Keywords :
integrated circuit bonding; polymers; silicon compounds; three-dimensional integrated circuits; 3D IC; BCB bonding; BCB surface; PECVD oxide bonding; SiO; bonding strength; polymer bonding; thermal oxide bonding; Annealing; Bonding; Integrated circuits; Polymers; Silicon; Surface structures; Three dimensional displays;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991641
