• DocumentCode
    2860932
  • Title

    High voltage SOS/MOS devices and circuit elements,

  • Author

    Splinter, M. ; Ronen, Ronny ; Tremain, R.

  • Author_Institution
    Rockwell International, Anaheim, CA, USA
  • Volume
    XIX
  • fYear
    1976
  • fDate
    18-20 Feb. 1976
  • Firstpage
    58
  • Lastpage
    59
  • Abstract
    SOS high-voltage MOS circuits, with drain breakdowns from 40-200 V, affording high density integration without increased processing complexity, will be discussed.
  • Keywords
    Circuits; Electric breakdown; Impurities; Low voltage; MOS devices; MOSFETs; Oxidation; Silicon; Space charge; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1976.1155535
  • Filename
    1155535
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2860932