Title :
High power single mode lasers based on InAs/GaInAs quantum dot material with enhanced temperature stability
Author :
Kaiser, W. ; Deubert, S. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Tech. Phys., Univ. of Wurzburg, Wurzburg
Abstract :
High power 915 nm quantum dot lasers with increased temperature stability of the emission wavelength (< 0.1 nm/K) were realized. By application of a lateral grating to tapered lasers a single mode emission of > 400 mW was achieved.
Keywords :
III-V semiconductors; diffraction gratings; gallium arsenide; indium compounds; laser beams; laser modes; laser stability; optical materials; quantum dot lasers; thermal stability; InAs-GaInAs; emission wavelength; high power single mode laser; lateral grating; quantum dot material; tapered lasers; temperature stability; Laser modes; Laser stability; Optical materials; Power lasers; Quantum dot lasers; Temperature; (140.2020) Diode lasers; (140.3070) Infrared and far-infrared lasers; (140.3490) Lasers, distributed-feedback; (140.5960) Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4627604
