Interface characterization of epitaxial GaAs on Ge(001) substrates with high-k dielectrics for nanoscale CMOS

Author

Wong, T.K.S. ; Li, Yuhua ; Dalapati, G. ; Kumar, M. Kiran ; Chia, C.K. ; Gao, Huijun ; Wang, B.Z. ; Chi, D.Z.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

fYear

2011

fDate

21-24 June 2011

Firstpage

1

Lastpage

2

Abstract

Zn: GaAs and undoped GaAs were grown by metalorganic chemical vapor deposition (MOCVD) at reduced temperature on Ge (001) substrates. High-k ZrO₂ layers were deposited by radio frequency (RF) sputtering. Ge in-diffusion was observed. The electrical characteristics of the GaAs/ZrO₂ interface was characterized by capacitance voltage measurements of TaN/high-k/GaAs/Ge metal insulator semiconductor (MIS) structures at 10kHz and 100kHz.

Keywords

III-V semiconductors; MIS structures; MOCVD; elemental semiconductors; epitaxial growth; gallium arsenide; germanium; high-k dielectric thin films; semiconductor epitaxial layers; sputter deposition; substrates; tantalum compounds; zinc; zirconium compounds; GaAs:Zn; Ge; Ge (001) substrates; MOCVD; TaN-ZrO₂-GaAs-Ge; capacitance voltage measurements; electrical characteristics; frequency 10 kHz; frequency 100 kHz; high-k dielectrics; interface characterization; metal insulator semiconductor structures; metalorganic chemical vapor deposition; nanoscale CMOS; radio frequency sputtering; Epitaxial growth; Gallium arsenide; High K dielectric materials; Silicon; Substrates; Surface impedance; Surface morphology; III-V; MOCVD; RF sputtering; germanium; high-k dielectric; interface;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Conference_Location

Tao-Yuan

ISSN

2159-3523

Print_ISBN

978-1-4577-0379-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2011.5991654

Filename

5991654