DocumentCode
2861199
Title
Microwave GaAs FETs: Reliability and reproducibility
Author
Cohen, Emmanuel
Volume
XIX
fYear
1976
fDate
18-20 Feb. 1976
Firstpage
174
Lastpage
174
Abstract
Microwave gallium arsenide Schottky barrier field-effect transistors have great potential for use in both military and commercial systems. However, a number of problems remain to be solved before GaAs FETs can be considered systems ready. Methods of improving the reliability and reproducibility of these devices will be discussed.
Keywords
Acoustical engineering; Bandwidth; Dynamic range; FETs; Gallium arsenide; Laboratories; Low-noise amplifiers; Microwave devices; Reproducibility of results; Schottky barriers;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1976.1155550
Filename
1155550
Link To Document