Investigation of bonding temperature for SU-8 materials in wafer-level hybrid bonding technology for 3D IC

Author

Cheng, C.A. ; Ko, C.T. ; Chen, K.N.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2011

fDate

21-24 June 2011

Firstpage

1

Lastpage

2

Abstract

Significant research has been performed in developing wafer-level metal/adhesive hybrid bonding technology by investigating bonding temperature optimization of SU-8 materials. The SU-8 wafers experience bonding failure when bonding temperature exceeds 275°C. As a result of the significant decomposition of epoxy rings and phenyl in plane bending above 275°C, Fourier Transform IR (FTIR) spectra measurements demonstrate that crosslinking inside SU-8 breaks and results in failed bonds. This research presents an evaluation of bonding quality and properties of SU-8 materials, which will assist the development of three dimension (3D) integration applications.

Keywords

Fourier transform spectra; bonding processes; three-dimensional integrated circuits; wafer bonding; 3D IC; Fourier transform IR spectra measurements; SU-8 materials; bonding temperature; epoxy rings; phenyl in plane bending; three dimension integration applications; wafer-level hybrid bonding technology; wafer-level metal; Bonding; Force; Materials; Metals; Temperature measurement; Three dimensional displays; Wafer bonding; 3D; FTIR; SU-8; Wafer level hybrid bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Conference_Location

Tao-Yuan

ISSN

2159-3523

Print_ISBN

978-1-4577-0379-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2011.5991657

Filename

5991657