• DocumentCode
    2861230
  • Title

    Automatic refresh dynamic memory

  • Author

    Boll, H. ; Fuls, E. ; Nelson, John ; Yau, L.

  • Author_Institution
    Bell Laboratories, Murray Hill, NJ, USA
  • Volume
    XIX
  • fYear
    1976
  • fDate
    18-20 Feb. 1976
  • Firstpage
    132
  • Lastpage
    133
  • Abstract
    This paper will discuss an Automatic Refresh Random Access Memory (RAM) cell, derived from a single transistor cell with a modest increase in cell complexity and size.
  • Keywords
    Capacitance; Capacitors; Circuits; Clocks; Electrons; Equations; Read-write memory; Threshold voltage; Timing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1976.1155552
  • Filename
    1155552
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2861230