Title :
Automatic refresh dynamic memory
Author :
Boll, H. ; Fuls, E. ; Nelson, John ; Yau, L.
Author_Institution :
Bell Laboratories, Murray Hill, NJ, USA
Abstract :
This paper will discuss an Automatic Refresh Random Access Memory (RAM) cell, derived from a single transistor cell with a modest increase in cell complexity and size.
Keywords :
Capacitance; Capacitors; Circuits; Clocks; Electrons; Equations; Read-write memory; Threshold voltage; Timing;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1976.1155552
